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Research


Led by Prof. Zafer Mutlu, our research focuses on developing advanced materials and building them into functional devices. We are interested in how the structure of a material controls the way electrons and sound waves move through it, and how that can be used for computing, sensing, and wireless communication. We carry out the full process in-house, from synthesizing and engineering materials to fabricating devices and measuring them from cryogenic to room temperature and at radio frequencies.

Nanoribbon Transistors Nanoribbon Sensors Acoustic Wave Devices Exploratory Projects

Computing

Graphene Nanoribbon Transistors

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Small journal cover art on the growth and device integration of five-atom-wide armchair graphene nanoribbons

Cover art from Small (Issue 31, 2022) for our work with collaborators at Empa on the growth and device integration of five-atom-wide armchair graphene nanoribbons.

Silicon transistors are approaching their physical scaling limits, and new channel materials are needed for future electronics. We study atomically precise graphene nanoribbons (GNRs) as one of these materials. GNRs are grown on metal surfaces from molecular precursors, which link into polymer chains and then fuse into flat carbon ribbons. The precursor sets the width and edge structure of the ribbon with atomic precision. Since electrons are confined across a width of about one nanometer, quantum effects open a band gap that depends on the exact number of carbon atoms across the ribbon. Most of our work so far has used nine-atom-wide armchair ribbons (9-AGNRs), and we are now also studying other types of GNRs whose different widths and edge structures give different electronic properties. GNR structure can also produce topological electronic states, which we have explored with collaborators in nitrogen core-doped GNRs.

Our device work covers scaling, gating, contacts, stability, and integration. We have fabricated GNR transistors with channel lengths down to 7 nm and shown that double-gate devices with ultrathin high-k dielectrics improve gate control. Charge must pass from metal contacts into a ribbon less than a nanometer wide, so the contact interface often limits performance, and we have studied how contact engineering affects charge injection. We have also shown that atomic-layer-deposited encapsulation improves long-term stability and reliability, and developed an etch-free method for transferring GNRs and other low-dimensional materials from metal films onto 100-mm wafers.

The performance of GNR transistors is still below theoretical predictions. Our current work focuses on improving the interfaces between the ribbons, dielectrics, and contacts, and on moving from single devices toward simple circuits.

Sensing

Graphene Nanoribbon Sensors

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ACS Applied Materials & Interfaces supplementary front cover featuring graphene nanoribbon transistors under gamma irradiation

Supplementary front cover of ACS Applied Materials & Interfaces (2026) featuring our study of graphene nanoribbon transistors under gamma irradiation.

The same nanoribbon devices can also be used as sensors. A GNR is a single layer of carbon about one nanometer wide, so nearly every atom is at the surface. Changes in its surroundings, such as trapped charge in the dielectric, defects in the ribbon, or incoming radiation, can change the current through the device in a measurable way.

In a recent study, we exposed 9-AGNR transistors to gamma radiation and tracked both their electrical behavior and the structure of the ribbons. The devices showed a strong electrical response, which we relate to the behavior of charge carriers in such narrow channels. These sensors are small and require little power, which makes them promising for radiation detection in settings such as space systems and other harsh environments. We are extending this work to other types of radiation. In a different direction, we are exploring GNR devices for detecting the very weak light emitted by biological samples, which calls for a different kind of sensor than those used for conventional biological sensing.

Communication

Topological Acoustic Wave Devices

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Radio-frequency probe station in ANNLab and schematic of a surface acoustic wave device with interdigital transducers and a phononic structure

Top: radio-frequency probe station in our lab in the Grand Challenges Research Building (photo courtesy of Howard Yawit). Bottom: schematic of a surface acoustic wave device with interdigital transducers (IDTs) and a phononic structure.

Surface acoustic wave (SAW) devices filter radio signals in phones and other wireless systems. Interdigital transducers, metal electrodes patterned on a piezoelectric crystal, convert an electrical signal into a sound wave that travels along the chip surface and then back into an electrical signal. Sound travels much more slowly than electromagnetic waves, which keeps these devices compact. At higher frequencies, the acoustic wavelength becomes shorter, and small fabrication imperfections scatter the waves and increase losses.

We fabricate SAW devices on 128° Y-cut lithium niobate and add periodic structures along the wave path. These phononic structures create stop bands, frequency ranges in which sound cannot propagate, and can be designed to confine and guide acoustic waves. In collaboration with theory and simulation groups, we have worked on composite superlattice RF SAW devices based on this approach. We also use laser direct writing to pattern these structures without masks, which allows us to test new designs quickly and compare them with simulations.

Our longer-term goal is to apply concepts from topological physics to these devices. In a topological design, the lattice structure guides sound along paths that are less affected by defects, which could make high-frequency components more robust. We are also investigating phase-change materials for changing the acoustic properties of a device after fabrication, with the aim of reconfigurable RF components.

Exploratory

Exploratory Projects

Our methods for electrical transport measurements, contact studies, and nanofabrication also apply to other materials and fields. We take on smaller projects that use these methods, often with collaborators from other disciplines.

Chalcopyrite, the most common copper ore, is a semiconductor whose electronic properties vary with composition. With geologists and metallurgists, we use Hall effect measurements on chalcopyrite from different geological sources to study how composition affects its semiconducting properties, with the goal of understanding how easily it dissolves during copper extraction. We have also contributed to a study of Schottky barrier formation at interfaces between rare-earth tritelluride charge density wave materials and semiconductors, which relates to our interest in contacts on quantum materials. Some of these projects remain small, and others develop into longer-term research.

Publications People Join